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| NPN Silicon AF Transistors BCW 60 BCX 70 q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 61, BCX 71 (PNP) Type BCW 60 A BCW 60 B BCW 60 C BCW 60 D BCW 60 FF BCW 60 FN BCX 70 G BCX 70 H BCX 70 J BCX 70 K Marking AAs ABs ACs ADs AFs ANs AGs AHs AJs AKs Ordering Code (tape and reel) Q62702-C1517 Q62702-C1497 Q62702-C1476 Q62702-C1477 Q62702-C1529 Q62702-C1567 Q62702-C1539 Q62702-C1481 Q62702-C1552 Q62702-C1571 Pin Configuration 1 2 3 B E C Package1) SOT-23 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 5.91 BCW 60 BCX 70 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation, TS = 71 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS Symbol BCW 60 VCE0 VCB0 VEB0 IC ICM IBM Ptot Tj Tstg 32 32 Values BCW 60 FF BCX 70 32 32 5 100 200 200 330 150 - 65 ... + 150 45 45 Unit V mA mW C 310 240 K/W 1) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BCW 60 BCX 70 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCW 60, BCW 60 FF BCX 70 Collector-base breakdown voltage IC = 10 A BCW 60, BCW 60 FF BCX 70 Emitter-base breakdown voltage IE = 1 A Collector cutoff current VCB = 32 V VCB = 45 V VCB = 32 V, TA = 150 C VCB = 45 V, TA = 150 C Emitter cutoff current VEB = 4 V DC current gain 1) IC = 10 A, VCE = 5 V BCW 60 A, BCX 70 G BCW 60 B, BCX 70 H BCW 60 FF, BCW 60 C, BCX 70 J BCW 60 FN, BCW 60 D, BCX 70 K IC = 2 mA, VCE = 5 V BCW 60 A, BCX 70 G BCW 60 B, BCX 70 H BCW 60 FF, BCW 60 C, BCX 70 J BCW 60 FN, BCW 60 D, BCX 70 K IC = 50 mA, VCE = 1 V BCW 60 A, BCX 70 G BCW 60 B, BCX 70 H BCW 60 FF, BCW 60 C, BCX 70 J BCW 60 FN, BCW 60 D, BCX 70 K BCW 60, BCW 60 FF BCX 70 BCW 60, BCW 60 FF BCX 70 IEB0 hFE 20 20 40 100 120 180 250 380 50 70 90 100 140 200 300 460 170 250 350 500 - - - - - - - - 220 310 460 630 - - - - V(BR)CE0 32 45 V(BR)CB0 32 45 V(BR)EB0 ICB0 - - - - - - - - - - 20 20 20 20 20 nA nA A A Values typ. max. Unit V - - - - - - - - - - 5 nA - 1) Pulse test: t 300 s, D 2 %. Semiconductor Group 3 BCW 60 BCX 70 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA Base-emitter saturation voltage1) IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA Base-emitter voltage IC = 10 A, VCE = 5 V IC = 2 mA, VCE = 5 V IC = 50 mA, VCE = 1 V 1) AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Output capacitance VCB = 10 V, f = 1 MHz Input capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz BCW 60 A, BCX 70 G BCW 60 B, BCX 70 H BCW 60 FF, BCW 60 C, BCX 70 J BCW 60 FN, BCW 60 D, BCX 70 K Open-circuit reverse voltage transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz BCW 60 A, BCX 70 G BCW 60 B, BCX 70 H BCW 60 FF, BCW 60 C, BCX 70 J BCW 60 FN, BCW 60 D, BCX 70 K fT Cobo Cibo h11e - - - - h12e - - - 1.5 2.0 2.0 3.0 - - - 2.7 3.6 4.5 7.5 - - - - 10- 4 - - - 250 3 8 - - - k MHz pF VCEsat - - VBEsat - - VBE (on) - 0.55 - 0.52 0.65 0.78 - 0.75 - 0.70 0.83 0.85 1.05 0.12 0.20 0.25 0.55 V Values typ. max. Unit 1) Pulse test: t 300 s, D 2 %. Semiconductor Group 4 BCW 60 BCX 70 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. AC characteristics Short-circuit forward current transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz BCW 60 A, BCX 70 G BCW 60 B, BCX 70 H BCW 60 FF, BCW 60 C, BCX 70 J BCW 60 FN, BCW 60 D, BCX 70 K Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz BCW 60 A, BCX 70 G BCW 60 B, BCX 70 H BCW 60 FF, BCW 60 C, BCX 70 J BCW 60 FN, BCW 60 D, BCX 70 K Noise figure IC = 0.2 mA, VCE = 5 V, RS = 2 k f = 1 kHz, f = 200 Hz BCW 60 A to BCX 70 K BCW 60 FF, BCW 60 FN Equivalent noise voltage IC = 0.2 mA, VCE = 5 V, RS = 2 k f = 10 Hz ... 50 Hz BCW 60 FF, BCW 60 FN h21e - - - - h22e - - - - F 18 24 30 50 - - - - dB 200 260 330 520 - - - - s Values typ. max. Unit - - - Vn - 2 1 - - 2 0.135 V Semiconductor Group 5 BCW 60 BCX 70 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance CCB0 = f (VCB0) Emitter-base capacitance CEB0 = f (VEB0) Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V Semiconductor Group 6 BCW 60 BCX 70 Base-emitter saturation voltage IC = f (VBEsat) hFE = 40 Collector-emitter saturation voltage IC = f (VCEsat) hFE = 40 Collector current IC = f (VBE) VCE = 5 V DC current gain hFE = f (IC) VCE = 5 V Semiconductor Group 7 BCW 60 BCX 70 Collector cutoff current ICB0 = f (TA) h parameter he = f (IC) VCE = 5 V h parameter he = f (VCE) IC = 2 mA Noise figure F = f (VCE) IC = 0.2 mA, RS = 2 k, f = 1 kHz Semiconductor Group 8 BCW 60 BCX 70 Noise figure F = f (f) IC = 0.2 mA, RS = 2 k,VCE = 5 V Noise figure F = f (IC) VCE = 5 V, f = 120 Hz Noise figure F = f (IC) VCE = 5 V, f = 1 kHz Noise figure F = f (IC) VCE = 5 V, f = 10 kHz Semiconductor Group 9 |
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